The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Jun. 16, 2011
Applicants:

Sebastian Mack, Freiburg, DE;

Ulrich Jager, Freiburg, DE;

Andreas Wolf, Freiburg, DE;

Daniel Biro, Freiburg, DE;

Ralf Preu, Freiburg, DE;

Gero Kastner, Freiburg, DE;

Inventors:

Sebastian Mack, Freiburg, DE;

Ulrich Jager, Freiburg, DE;

Andreas Wolf, Freiburg, DE;

Daniel Biro, Freiburg, DE;

Ralf Preu, Freiburg, DE;

Gero Kastner, Freiburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 21/2255 (2013.01); H01L 21/268 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front () of a semiconductor substrate; B. generating a selective emitter doping on the front () of the semiconductor substrate by generating on the front () a first low-doped region () and a local high-doped region () within the first low-doped region; and C. applying at least one metal emitter contact structure to the front () of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer () is generated in a method step Bsimultaneously on the front and back of the semiconductor substrate via thermal oxidation.


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