The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Sep. 25, 2013
Chint Solar (Zhejiang) Co.,ltd., Hangzhou, CN;
Xinwei Niu, Hangzhou, CN;
Cao Yu, Hangzhou, CN;
Lan Ding, Hangzhou, CN;
Junmei Rong, Hangzhou, CN;
Shiyong Liu, Hangzhou, CN;
Minghua Wang, Hangzhou, CN;
Jinyan Hu, Hangzhou, CN;
Weizhi Han, Hangzhou, CN;
Yongmin Zhu, Hangzhou, CN;
Hua Zhang, Hangzhou, CN;
Tao Feng, Hangzhou, CN;
Jianbo Jin, Hangzhou, CN;
Zhanwei Qiu, Hangzhou, CN;
Liyou Yang, Hangzhou, CN;
Chint Solar (Zhejiang) Co., Ltd., Hangzhou, CN;
Abstract
The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection. Therefore, the step of texturization is removed and the fabrication process simplified. As polycrystal silicon texturization is more challenging, the present invention is of more significance to heterojunction batteries using a polycrystal silicon wafer.