The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jul. 27, 2010
Applicants:
Seiichiro Inai, Higashiomi, JP;
Yoshihide Okawa, Higashiomi, JP;
Isamu Tanaka, Higashiomi, JP;
Koichiro Yamada, Higashiomi, JP;
Inventors:
Seiichiro Inai, Higashiomi, JP;
Yoshihide Okawa, Higashiomi, JP;
Isamu Tanaka, Higashiomi, JP;
Koichiro Yamada, Higashiomi, JP;
Assignee:
KYOCERA Corporation, Kyoto, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/032 (2006.01); H01L 21/02 (2006.01); H01L 31/046 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 21/02491 (2013.01); H01L 21/02568 (2013.01); H01L 21/02628 (2013.01); Y02E 10/541 (2013.01); H01L 31/046 (2014.12);
Abstract
A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.