The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jul. 20, 2011
Atsushi Hiramoto, Machida, JP;
Masahiko Kubota, Tokyo, JP;
Ryoji Kanri, Zushi, JP;
Akihiko Okano, Fujisawa, JP;
Yoshiyuki Fukumoto, Kawasaki, JP;
Atsunori Terasaki, Kawasaki, JP;
Atsushi Hiramoto, Machida, JP;
Masahiko Kubota, Tokyo, JP;
Ryoji Kanri, Zushi, JP;
Akihiko Okano, Fujisawa, JP;
Yoshiyuki Fukumoto, Kawasaki, JP;
Atsunori Terasaki, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A processing method of a silicon substrate including forming a second opening in a bottom portion of a first opening using a patterning mask having a pattern opening by plasma reactive ion etching. The reactive ion etching is performed with a shield structure formed in or on the silicon substrate, the shield structure preventing inside of the first opening from being exposed to the plasma.