The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Jul. 29, 2011
Applicants:

Masataka Fujinaga, Yamaguchi, JP;

Takuma Sakai, Yamaguchi, JP;

Shinsuke Jida, Yamaguchi, JP;

Inventors:

Masataka Fujinaga, Yamaguchi, JP;

Takuma Sakai, Yamaguchi, JP;

Shinsuke Jida, Yamaguchi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 11/08 (2006.01); C09K 11/77 (2006.01); C01B 21/068 (2006.01); C01B 21/082 (2006.01);
U.S. Cl.
CPC ...
C09K 11/0838 (2013.01); Y10T 428/2982 (2015.01); C01B 21/068 (2013.01); C01B 21/0826 (2013.01); C01P 2002/54 (2013.01); C01P 2004/03 (2013.01); C01P 2004/52 (2013.01); C01P 2004/61 (2013.01); C01P 2006/12 (2013.01); C01P 2006/80 (2013.01); C09K 11/7734 (2013.01);
Abstract

Provided is a silicon nitride powder for siliconitride phosphor having high luminance, a SrAlSiONphosphor and a β-Sialon phosphor using the powder, which can be used for vacuum fluorescent displays (VFDs), field emission displays (FEDs), plasma display panels (PDPs), cathode ray tubes (CRTs), light emitting diodes (LEDs), or the like, and processes for producing these phosphors. The silicon nitride powder for the siliconitride phosphors is a crystalline silicon nitride powder for use as a raw material for producing siliconitride phosphors including a silicon element, a nitrogen element, and an oxygen element, and has an average particle diameter of 1.0 to 12 μm and an oxygen content of 0.2 to 0.9% by weight.


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