The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jul. 13, 2012
Applicants:
Muthu Sebastian, Singapore, SG;
Fong Liang Tan, Singapore, SG;
Inventors:
Muthu Sebastian, Singapore, SG;
Fong Liang Tan, Singapore, SG;
Assignee:
3M Innovative Properties Company, St. Paul, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C23F 1/30 (2006.01); C09K 13/04 (2006.01); G06F 3/044 (2006.01);
U.S. Cl.
CPC ...
C23F 1/30 (2013.01); C09K 13/04 (2013.01); G06F 3/044 (2013.01);
Abstract
A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.