The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Nov. 25, 2011
Applicants:

Alexandre Hubert, Magny les Hameaux, FR;

Maryline Bawedin, Montpellier, FR;

Sorin Cristoloveanu, Seyssinet Pariset, FR;

Thomas Ernst, Morette, FR;

Inventors:

Alexandre Hubert, Magny les Hameaux, FR;

Maryline Bawedin, Montpellier, FR;

Sorin Cristoloveanu, Seyssinet Pariset, FR;

Thomas Ernst, Morette, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); H01L 27/108 (2006.01); H01L 29/792 (2006.01); B82Y 10/00 (2011.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); B82Y 10/00 (2013.01); H01L 21/28282 (2013.01); H01L 27/11568 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01);
Abstract

A memory device is provided, including a back gate including a first portion of electrically conductive material, a first portion of dielectric material arranged on the back gate, a semiconductor nanobeam arranged on the first portion of dielectric material, a second portion of dielectric material covering the semiconductor nanobeam, a portion of material configured to receive electrons and holes, and configured to store electrical charges and covering the second portion of dielectric material, a third portion of dielectric material covering the portion of material configured to perform storage of electrical charges, and a front gate including a second portion of electrically conductive material covering the third portion of dielectric material.


Find Patent Forward Citations

Loading…