The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
May. 03, 2013
Nxp B.v., Eindhoven, NL;
Johannes Adrianus Maria De Boet, Beuningen, NL;
NXP, B.V., Eindhoven, NL;
Abstract
The invention relates to an electronic device comprising an RF-LDMOS transistor () and a protection circuit () for the RF-LDMOS transistor. The protection circuit () comprises: i) an input terminal (Ni) coupled to a drain terminal (Drn) of the RF-LDMOS transistor (); ii) a clipping node (Nc); iii) a clipping circuit () coupled to the clipping node (Nc) for substantially keeping the voltage on the clipping node (Nc) below a predefined reference voltage, wherein the predefined reference voltage is designed to be larger than the operation voltage on the drain terminal (Drn) and lower than a trigger voltage of a parasitic bipolar transistor () that is inherently present in the RF-LDMOS transistor; iv) a capacitance (Ct) coupled between the clipping node (Nc) and a further reference voltage terminal (Gnd), and v) a rectifying element (D, D) connected with its anode terminal to the input terminal (Ni) and with its cathode terminal to the clipping node (Nc). The invention provides an RF-LDMOS transistor having an improved RF ruggedness, while not, or at least to a much lesser extent, compromising the RF performance of the RF-LDMOS transistor.