The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Sep. 11, 2012
Applicants:

Guang Hai Jin, Yongin, KR;

Jae-beom Choi, Yongin, KR;

Kwan-wook Jung, Yongin, KR;

June-woo Lee, Yongin, KR;

Moo-jin Kim, Yongin, KR;

Jee-hoon Kim, Yongin, KR;

Inventors:

Guang hai Jin, Yongin, KR;

Jae-Beom Choi, Yongin, KR;

Kwan-Wook Jung, Yongin, KR;

June-Woo Lee, Yongin, KR;

Moo-Jin Kim, Yongin, KR;

Jee-Hoon Kim, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/02 (2006.01); G01R 31/26 (2014.01); G09G 3/00 (2006.01); G09G 3/32 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2635 (2013.01); G09G 3/006 (2013.01); G09G 3/3233 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01);
Abstract

A pixel includes an organic light emitting diode, a first transistor that is connected to a first power source and that supplies a driving current according to a corresponding data voltage to the organic light emitting diode, a second transistor that is connected to a scan line and that transmits the corresponding data voltage from a data line to a driving transistor according to a scan signal transmitted from the scan line, and a first capacitor including one electrode connected to a gate electrode of the first transistor. The first capacitor stores the corresponding data voltage as a first voltage and a size of the first capacitor is in a range of about 2 times to about 4 times a size of a gate insulating layer of the first transistor.


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