The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Apr. 29, 2013
Applicant:
O2micro Inc., Santa Clara, CA (US);
Inventors:
Marian Niculae, San Jose, CA (US);
Alexandru Hartular, San Jose, CA (US);
Dan Simion, Santa Clara, CA (US);
Guoying Yi, Milpitas, CA (US);
Assignee:
O2Micro, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02J 7/00 (2006.01); H03K 3/012 (2006.01); H02M 1/08 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 3/012 (2013.01); H02M 1/08 (2013.01); H03K 17/6874 (2013.01); H02J 7/0068 (2013.01);
Abstract
A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor.