The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Jul. 24, 2014
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Woo Jun Lee, Icheon, KR;
Seong Wan Ryu, Yongin, KR;
Assignee:
SK Hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7688 (2013.01); H01L 23/53257 (2013.01); H01L 21/76889 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/485 (2013.01); H01L 23/53271 (2013.01); H01L 21/76885 (2013.01); H01L 21/7682 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/7685 (2013.01); H01L 21/76852 (2013.01); H01L 21/76855 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes: a contact hole formed over a structure including a conductive pattern; a contact plug formed in the contact hole; a first metal silicide film surrounding the contact plug; and a second metal silicide film formed over the contact plug.