The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Sep. 30, 2013
International Business Machines Corporation, Armonk, NY (US);
Jeffrey P. Gambino, Westford, VT (US);
Qizhi Liu, Lexington, MA (US);
Zhenzhen Ye, South Burlington, NY (US);
Yan Zhang, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An isolation structure can include a structure material with thermal conductivity greater than silicon dioxide, yet electrical conductivity such that the structure material can replace silicon dioxide as an insulator. At least one column can extend to a target layer from a top surface of a semiconductor device near an active area of the device. At least one lateral portion can extend from the column(s) substantially parallel to the target layer and can extend between multiple columns in the target layer, such as in a cavity formed by lateral etching. The structure material can include, for example, aluminum nitride (AlN).