The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Feb. 03, 2012
Applicant:

Minoru Mitsui, Kanagawa, JP;

Inventor:

Minoru Mitsui, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2007 (2013.01); H01L 21/02381 (2013.01); H01L 21/76254 (2013.01); H01L 21/76251 (2013.01); H01L 21/02376 (2013.01);
Abstract

A silicon layer transfer substrate includes a silicon substrate of a first substrate, a sacrificial layer, and a transfer silicon layer transferred to a second substrate, wherein the sacrificial layer has a silicon compound layer containing a compound of silicon and at least one element selected from a group consisting of germanium and carbon, and is provided on the silicon substrate of the first substrate, the silicon compound layer having a thickness equal to or smaller than a critical film thickness, the transfer silicon layer transferred to the second substrate is provided on the sacrificial layer, and at least either the silicon substrate or the silicon layer has a groove or a hole connected to the sacrificial layer.


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