The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Jul. 11, 2012
Yang NI, Palaiseau, FR;
Yang Ni, Palaiseau, FR;
New Imaging Technologies, Verrieres le Buisson, FR;
Abstract
The invention relates to an InGaAs photodiode army () and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer () and an active gallium-indium arsenide layer (); and a plurality of anodes () at least partially formed in the active gallium-indium arsenide layer by diffusing a P-type dopant, the interaction between an anode () and the cathode forming a photodiode. According to said method, an indium-phosphide passivation layer () is arranged on the active layer before the diffusion of the P-type dopant forming the anodes (), and a first selective etching is performed so as to remove, over the entire thickness thereof, an area () of the passivation layer () surrounding each anode ().