The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
May. 04, 2012
Applicants:
Jochen Kraft, Oberaich, AT;
Ingrid Jonak-auer, Graz, AT;
Rainer Minixhofer, Unterpremstätten, AT;
Jordi Teva, Eindhoven, NL;
Herbert Truppe, Graz, AT;
Inventors:
Jochen Kraft, Oberaich, AT;
Ingrid Jonak-Auer, Graz, AT;
Rainer Minixhofer, Unterpremstätten, AT;
Jordi Teva, Eindhoven, NL;
Herbert Truppe, Graz, AT;
Assignee:
ams AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); H01L 31/103 (2013.01); Y02E 10/50 (2013.01); H01L 31/02005 (2013.01); H01L 31/18 (2013.01);
Abstract
The photodiode has a p-type doped region () and an n-type doped region () in a semiconductor body (), and a pn junction () between the p-type doped region and the n-type doped region. The semiconductor body has a cavity () such that the pn junction () has a distance (d) of at most 30 μm from the bottom of the cavity ().