The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Nov. 30, 2012
Applicant:
Silicon Laboratories Inc., Austin, TX (US);
Inventors:
Roger T. Howe, Los Gatos, CA (US);
Emmanuel P. Quevy, El Cerrito, CA (US);
Zhen Gu, Cupertino, CA (US);
Assignee:
Silicon Laboratories Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/0002 (2013.01); B81B 7/0038 (2013.01);
Abstract
A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.