The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Oct. 20, 2011
Applicants:

Takaaki Ukeda, Osaka, JP;

Akihito Miyamoto, Osaka, JP;

Inventors:

Takaaki Ukeda, Osaka, JP;

Akihito Miyamoto, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01); H01L 27/28 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 51/0529 (2013.01); H01L 27/283 (2013.01); H01L 29/6675 (2013.01); H01L 29/66772 (2013.01); H01L 51/0078 (2013.01); H01L 27/1255 (2013.01);
Abstract

The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.


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