The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jun. 12, 2014
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Yih-Chyun Kao, Changhua County, TW;

Hao-Lin Chiu, Taipei, TW;

Chun-Nan Lin, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 29/66742 (2013.01); H01L 29/78603 (2013.01); H01L 27/1288 (2013.01);
Abstract

A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a semiconductor layer, an etching stop pattern and a metal layer are formed sequentially on the first patterned metal layer. The metal layer and the semiconductor layer are patterned to form a second patterned metal layer and a patterned semiconductor layer. The second patterned metal layer includes data lines, a source and a drain. The patterned semiconductor layer includes a first semiconductor pattern completely overlapping the second patterned metal layer and a second semiconductor pattern without overlapping the second patterned metal layer, wherein the second semiconductor pattern includes a channel pattern and a marginal pattern. The channel pattern is between the source and the drain and the marginal pattern surrounds the first semiconductor pattern.


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