The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jul. 13, 2011
Applicants:

Dominique Tournier, Lyons, FR;

Pierre Brosselard, Villeurbanne, FR;

Florian Chevalier, Saint Etienne, FR;

Inventors:

Dominique Tournier, Lyons, FR;

Pierre Brosselard, Villeurbanne, FR;

Florian Chevalier, Saint Etienne, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/098 (2006.01); H01L 29/739 (2006.01); H01L 29/812 (2006.01); H01L 29/10 (2006.01); H01L 29/808 (2006.01); H01L 27/095 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8124 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01); H01L 29/7828 (2013.01); H01L 29/7832 (2013.01); H01L 29/8083 (2013.01); H01L 29/8122 (2013.01); H01L 29/872 (2013.01); H01L 27/095 (2013.01);
Abstract

The invention relates to a structure comprising an n-type substrate () having a bottom surface () and a top surface (), a drain (D) contacting the bottom surface () of the substrate (), a first n-type semiconductor region () having a top surface () provided with a contact area (), a source (S) contacting the contact area (), and a second p-type semiconductor region () arranged inside the first semiconductor region () and defining first and second conduction channels (C, C) between the drain and the source, characterized in that said structure comprises first and second metal gratings (G, G), each of which has a portion () contacting the first semiconductor region () so as to form a Schottky junction.


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