The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Aug. 21, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Tsuyoshi Takahashi, Ebina, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/12 (2006.01); H01L 29/66 (2006.01); H01L 27/14 (2006.01); H01L 51/05 (2006.01); H01L 31/08 (2006.01); H01L 31/00 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8613 (2013.01); H01L 29/12 (2013.01); H01L 29/6603 (2013.01); H01L 29/861 (2013.01); H01L 27/14 (2013.01); H01L 51/0575 (2013.01); H01L 31/085 (2013.01); H01L 31/00 (2013.01); H01L 31/03046 (2013.01);
Abstract
A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and third and fourth semiconductor layers of the first conductivity type formed between the first and second semiconductor layer. The first, the third, the fourth, and the second semiconductor layers are coupled in this order. A band gap of the third semiconductor layer is narrower than that of the first semiconductor layer, and a band gap of the fourth semiconductor layer is narrower than that of the third semiconductor layer.