The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Jan. 02, 2013
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG Innotek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/04 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); F21K 99/00 (2010.01); F21Y 101/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/04 (2013.01); H01L 33/20 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); F21K 9/135 (2013.01); F21Y 2101/02 (2013.01); H01L 2924/0002 (2013.01); H01L 2224/48091 (2013.01);
Abstract
Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer; and a nitride semiconductor layer having a refractive index less than a refractive index of the second conductive semiconductor layer on the second conductive semiconductor layer.