The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Aug. 12, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A semiconductor device includes an active region in which current flows when the semiconductor device is in an on state and a breakdown voltage structure portion which surrounds the active region. In the active region, a MOS gate structure includes, a p well region, an nsource region, a gate electrode, and a source electrode is provided on the front surface of a semiconductor substrate. A drain electrode which comes into contact with an ndrift region is provided from the rear surface to the side surface of the semiconductor substrate. The drain electrode forms a Schottky contact with the ndrift region which is the semiconductor substrate. In the breakdown voltage structure portion, a leakage current reducing layer reduces leakage current from the outer circumferential edge of the semiconductor substrate and is provided at least at the outer circumferential edge of the semiconductor substrate.