The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Dec. 26, 2013
Applicant:
Gwangju Institute of Science and Technology, Gwangju, KR;
Inventors:
Seong-Ju Park, Gwangju, KR;
Yong Seok Choi, Gwangju, KR;
Jang-Won Kang, Gwangju, KR;
Byeong Hyeok Kim, Gwangju, KR;
Assignee:
Gwangju Institute of Science and Technology, Gwangju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/28 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0083 (2013.01); H01L 33/28 (2013.01);
Abstract
Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF, NaF, SrF, or MgF. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.