The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Oct. 16, 2013
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Qi-Kun Xue, Beijing, CN;
Ke He, Beijing, CN;
Xu-Cun Ma, Beijing, CN;
Xi Chen, Beijing, CN;
Li-Li Wang, Beijing, CN;
Cui-Zu Chang, Beijing, CN;
Xiao Feng, Beijing, CN;
Yao-Yi Li, Beijing, CN;
Jin-Feng Jia, Beijing, CN;
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Abstract
A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr(BiSb)Te. 0<x<1, 0<y<2. Values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi. The magnetically doped TI quantum well film is in 3 QL to 5 QL.