The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Sep. 04, 2013
Applicants:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Jean-Francois Nodin, Quaix en Chartreuse, FR;
Veronique Sousa, Grenoble, FR;
Sandrine Lhostis, Theys, FR;
Assignees:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1246 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/165 (2013.01); H01L 45/1683 (2013.01);
Abstract
A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region.