The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Aug. 31, 2012
Applicant:

Murato Kawai, Yokkaichi, JP;

Inventor:

Murato Kawai, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/1608 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract

A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second conductive layer. The variable resistance layer is provided above the first conductive layer. The electrode layer contacts an upper surface of the variable resistance layer. The first liner layer contacts the upper surface of the electrode layer. The stopper layer contacts the upper surface of the first liner layer. The second conductive layer is provided above the stopper layer. The first liner layer is made of a material having a property for canceling an influence of an orientation of a lower layer of the first liner layer, the property of the first liner layer being superior compared with that of the stopper layer.


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