The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Sep. 05, 2011
Applicants:

Shun Moriyama, Annaka, JP;

Takenori Watabe, Annaka, JP;

Takashi Murakami, Annaka, JP;

Shintarou Tsukigata, Annaka, JP;

Mitsuhito Takahashi, Annaka, JP;

Hiroyuki Otsuka, Annaka, JP;

Inventors:

Shun Moriyama, Annaka, JP;

Takenori Watabe, Annaka, JP;

Takashi Murakami, Annaka, JP;

Shintarou Tsukigata, Annaka, JP;

Mitsuhito Takahashi, Annaka, JP;

Hiroyuki Otsuka, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); H01L 31/068 (2013.01); Y02E 10/547 (2013.01);
Abstract

Disclosed is a solar cell having a silicon monocrystal substrate surface with a textured structure and, near the surface of said substrate, a damage layer reflecting the slice processing history from the time of manufacture of the silicon monocrystal substrate. The damage layer near the surface of the silicon monocrystal substrate is derived from the slice processing history at the time of manufacture of the substrate and functions as a gettering site, contributing to a longer lifetime of the substrate minority carriers. Thanks to this effect, the solar cell characteristics are dramatically increased. Further, new damage need be inflicted, and no additional work is required because damage from the slicing is used.


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