The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Aug. 30, 2011
Eric G. Liniger, Sandy Hook, CT (US);
Griselda Bonilla, Fishkill, NY (US);
Pak Leung, Cedar Park, TX (US);
Stephen A. Cohen, Wappingers Fall, NY (US);
Stephen M. Gates, Ossining, NY (US);
Thomas M. Shaw, Peekskill, NY (US);
Eric G. Liniger, Sandy Hook, CT (US);
Griselda Bonilla, Fishkill, NY (US);
Pak Leung, Cedar Park, TX (US);
Stephen A. Cohen, Wappingers Fall, NY (US);
Stephen M. Gates, Ossining, NY (US);
Thomas M. Shaw, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of annealing a semiconductor and a semiconductor. The method of annealing including heating the semiconductor to a first temperature for a first period of time sufficient to remove physically-adsorbed water from the semiconductor and heating the semiconductor to a second temperature, the second temperature being greater than the first temperature, for a period of time sufficient to remove chemically-adsorbed water from the semiconductor. A semiconductor device including a plurality of metal conductors, and a dielectric including regions separating the plurality of metal conductors, the regions including an upper interface and a lower bulk region, the upper interface having a density greater than a density of the lower bulk region.