The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Mar. 18, 2014
Applicant:
Phostek Inc., Grand Cayman, KY;
Inventor:
Yuan-Hsiao Chang, Taipei, TW;
Assignee:
Phostek Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/02 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/05 (2014.01); H01L 31/055 (2014.01); H01L 31/0475 (2014.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 2933/0016 (2013.01); H01L 33/0079 (2013.01); H01L 31/18 (2013.01); H01L 31/022433 (2013.01); H01L 31/0504 (2013.01); H01L 31/0508 (2013.01); H01L 31/055 (2013.01); H01L 31/0475 (2014.12); Y02E 10/52 (2013.01);
Abstract
A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.