The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jan. 14, 2014
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Yoshinori Hirano, Annaka, JP;

Masashi Iio, Joetsu, JP;

Hideyoshi Yanagisawa, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2024 (2013.01);
Abstract

A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm. At the end of step (F), the sacrificial film has a sidewall angle of 80°-90° relative to the substrate.


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