The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Apr. 30, 2009
Junpei Yamanaka, Nagoya, JP;
Mariko Shinohara, Nagoya, JP;
Akiko Toyotama, Nagoya, JP;
Koki Yoshizawa, Nagoya, JP;
Sachiko Onda, Nagoya, JP;
Masakatsu Yonese, Nagoya, JP;
Fumio Uchida, Osaka, JP;
Junpei Yamanaka, Nagoya, JP;
Mariko Shinohara, Nagoya, JP;
Akiko Toyotama, Nagoya, JP;
Koki Yoshizawa, Nagoya, JP;
Sachiko Onda, Nagoya, JP;
Masakatsu Yonese, Nagoya, JP;
Fumio Uchida, Osaka, JP;
Nagoya City University, Nagoya-Shi, JP;
Fuji Chemical Co., Ltd., Osaka-Shi, JP;
Abstract
Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.