The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Jan. 25, 2013
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Masayuki Tsuchiya, Ebina, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H01L 31/0232 (2014.01); H04N 5/374 (2011.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0232 (2013.01); H04N 5/374 (2013.01); H01L 31/18 (2013.01); H01L 27/14603 (2013.01); H01L 27/1461 (2013.01); H01L 27/1462 (2013.01); H01L 27/14689 (2013.01);
Abstract

In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 μm or less from an end, on a side of the floating diffusion region, of the gate electrode.


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