The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Dec. 30, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Johan Rothman, Grenoble, FR;
Abstract
Avalanche diode-type semiconductor structure () intended to receive electromagnetic radiation in a given wavelength. The structure () comprises a semiconductor multiplication zone () including a majority carrier concentration, and delimitation means suitable for laterally delimiting the multiplication zone (). The delimitation means comprise a semiconductor zone () surrounding the multiplication zone () and comprising a forbidden energy gap greater than the forbidden energy gap of the major part () of the multiplication zone (), said zone () having a type of conductivity opposite that of the multiplication zone () with a majority carrier concentration at least 10 times greater than that of the multiplication zone (). The invention also relates to a process for producing an avalanche photodiode-type semiconductor structure.