The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Jun. 27, 2012
Applicants:
Il-doo Kim, Seoul, KR;
Harry L. Tuller, Wellesley, MA (US);
Yong Woo Choi, Seoul, KR;
Akintunde I. Akinwande, Newton, MA (US);
Inventors:
Il-Doo Kim, Seoul, KR;
Harry L. Tuller, Wellesley, MA (US);
Yong Woo Choi, Seoul, KR;
Akintunde I. Akinwande, Newton, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/20 (2006.01); H01L 51/00 (2006.01); H01L 41/313 (2013.01);
U.S. Cl.
CPC ...
H01L 21/2007 (2013.01); H01L 51/0013 (2013.01); H01L 41/313 (2013.01);
Abstract
A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO, LaSrCoO(LSCO), or LaPbCoO(LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.