The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Aug. 01, 2014
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Kazunobu Kuwazawa, Sakata, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 23/48 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/1095 (2013.01); H01L 29/4232 (2013.01); H01L 23/481 (2013.01); H01L 29/41725 (2013.01);
Abstract
A semiconductor device includes an N-type well, a P-type body diffusion layer, an N-type source diffusion layer, an N-type drain diffusion layer, and a P-type body contact region. A plurality of the P-type body contact regionsare located along gate electrodesand, a plurality of first contact holesare located along the gate electrodes, and a plurality of second contact holesare located along the gate electrodes. The pitch of the plurality of P-type body contact regionsis larger than the pitch of the plurality of first contact holes