The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Dec. 04, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Takuo Ohashi, Mie-ken, JP;
Fumiki Aiso, Mie-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 21/28273 (2013.01); Y10S 257/914 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes an insulating film with a recess formed in an upper surface, and a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon. Carbon concentration of a first portion of the conductive film in contact with the insulating film is lower than carbon concentration of a second portion of the conductive film located in the recess and being equidistant from the insulating film placed on both sides thereof.