The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Apr. 26, 2010
Robert Walter, Parsberg, DE;
Vincent Grolier, München, DE;
Michael Schmal, Schmidmühlen, DE;
Korbinian Perzlmaier, Regensburg, DE;
Franz Eberhard, Regensburg, DE;
Robert Walter, Parsberg, DE;
Vincent Grolier, München, DE;
Michael Schmal, Schmidmühlen, DE;
Korbinian Perzlmaier, Regensburg, DE;
Franz Eberhard, Regensburg, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic semiconductor body () having an active semiconductor layer sequence () and a reflective layer system () is described. The reflective layer system () comprises a first radiation-permeable layer (), which adjoins the semiconductor layer sequence (), and a metal layer () on the side of the first radiation-permeable layer () facing away from the semiconductor layer sequence (). The first radiation-permeable layer () contains a first dielectric material. Between the first radiation-permeable layer () and the metal layer () there is disposed a second radiation-permeable layer () which contains an adhesion-improving material. The metal layer () is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer () is improved in comparison with the adhesion on the first dielectric material.