The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Sep. 04, 2013
Vertically structured group iii nitride semiconductor led chip and method for manufacturing the same
Wavesquare Inc., Yongin, Gyeonggi-Do, KR;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Meoung Whan Cho, Gyeonggi-Do, KR;
Seog Woo Lee, Gyeonggi-Do, KR;
Pil Guk Jang, Gyeonggi-Do, KR;
Ryuichi Toba, Tokyo, JP;
Tatsunori Toyota, Toyko, JP;
Yoshitaka Kadowaki, Tokyo, JP;
Wavesquare Inc., Yongin, KR;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon ('n' is a positive integer) having rounded corners.