The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Aug. 29, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Seong Suk Lee, Hwaseong-si, KR;
Ok Hyun Kim, Suwon-si, KR;
Dong Yul Lee, Yongin-si, KR;
Dong Ju Lee, Suwon-si, KR;
Jeong Wook Lee, Yongin-si, KR;
Heon Ho Lee, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01);
Abstract
A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.