The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Sep. 12, 2013
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventor:

Takanobu Akagi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/58 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/0095 (2013.01); H01L 33/02 (2013.01); H01L 33/10 (2013.01);
Abstract

A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane.


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