The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Dec. 28, 2012
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Akihiro Oda, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This semiconductor device () includes a substrate (), a gate electrode (), a gate insulating film (), an oxide semiconductor layer (), a source electrode (), a drain electrode (), and a protective film (). The upper and side surfaces of the oxide semiconductor layer are covered with the source and drain electrodes and the protective film. When viewed along a normal to the substrate, the narrowest gap between the respective outer peripheries of a first contact region () and the source electrode and the narrowest gap between the respective outer peripheries of a second contact region () and the drain electrode both have a length of 1.5 μm to 4.5 μm.