The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Feb. 28, 2012
Mitsuhiro Kushibe, Tokyo, JP;
Yasuo Ohba, Kanagawa-ken, JP;
Hiroshi Katsuno, Tokyo, JP;
Kei Kaneko, Kanagawa-ken, JP;
Shinji Yamada, Tokyo, JP;
Mitsuhiro Kushibe, Tokyo, JP;
Yasuo Ohba, Kanagawa-ken, JP;
Hiroshi Katsuno, Tokyo, JP;
Kei Kaneko, Kanagawa-ken, JP;
Shinji Yamada, Tokyo, JP;
Kabushiki kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.