The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Dec. 27, 2010
Applicants:

Matthias Peter, Regensburg, DE;

Tobias Meyer, Ihrlerstein, DE;

Alexander Walter, Laaber, DE;

Tetsuya Taki, Yokohama, JP;

Juergen Off, Regensburg, DE;

Rainer Butendeich, Regensburg, DE;

Joachim Hertkorn, Alteglofsheim, DE;

Inventors:

Matthias Peter, Regensburg, DE;

Tobias Meyer, Ihrlerstein, DE;

Alexander Walter, Laaber, DE;

Tetsuya Taki, Yokohama, JP;

Juergen Off, Regensburg, DE;

Rainer Butendeich, Regensburg, DE;

Joachim Hertkorn, Alteglofsheim, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/14 (2010.01); H01L 33/04 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/382 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.


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