The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Mar. 14, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jung-Sub Kim, Hwaseong-si, KR;
Sung-Won Hwang, Hwaseong-si, KR;
Geun-Woo Ko, Suwon-si, KR;
Cheol-Soo Sone, Seoul, KR;
Sung-Hyun Sim, Seoul, KR;
Jin-Sub Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/30 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/305 (2013.01); H01L 33/145 (2013.01); H01L 33/40 (2013.01); H01L 33/32 (2013.01); H01L 33/0075 (2013.01); H01L 33/14 (2013.01);
Abstract
A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.