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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9012333 B1

PDFFull Text
Date of Patent:
Apr. 21, 2015

Filed:

Sep. 09, 2009

Varied silicon richness silicon nitride formation

Applicants:

Yi MA, Santa Clara, CA (US);

Shenqing Fang, Fremont, CA (US);

Robert Ogle, San Jose, CA (US);

Inventors:

Yi Ma, Santa Clara, CA (US);

Shenqing Fang, Fremont, CA (US);

Robert Ogle, San Jose, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01L 21/318 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3185 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/28282 (2013.01); H01L 21/3141 (2013.01); H01L 29/4234 (2013.01); H01L 29/518 (2013.01);
Abstract

A method, in one embodiment, can include forming a tunnel oxide layer on a substrate. In addition, the method can include depositing via atomic layer deposition a first layer of silicon nitride over the tunnel oxide layer. Note that the first layer of silicon nitride includes a first silicon richness. The method can also include depositing via atomic layer deposition a second layer of silicon nitride over the first layer of silicon nitride. The second layer of silicon nitride includes a second silicon richness that is different than the first silicon richness.

Find Patent Forward Citations

Ma, Yi. (2015). Varied silicon richness silicon nitride formation (U.S. Patent No. 9012333). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9012333

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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