The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Apr. 14, 2011
Applicants:
Nam-gun Kim, Seoul, KR;
Yoonjae Kim, Yongin-si, KR;
Sungil Cho, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 27/22 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 27/102 (2006.01); H01L 27/115 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 27/1021 (2013.01); H01L 27/10817 (2013.01); H01L 27/10855 (2013.01); H01L 27/10882 (2013.01); H01L 27/10894 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 27/224 (2013.01); H01L 27/24 (2013.01); H01L 28/91 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/10 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31144 (2013.01);
Abstract
A lower layer of a microelectronic device may be patterned by forming a first sacrificial layer on the lower layer; patterning a plurality of spaced apart trenches in the first sacrificial layer; forming a second sacrificial layer in the plurality of spaced apart trenches; patterning the second sacrificial layer in the plurality of spaced apart trenches to define upper openings in the plurality of spaced apart trenches; and patterning the lower layer using the first and second sacrificial layers as a mask to form lower openings in the lower layer.