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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9012326 B1

PDFFull Text
Date of Patent:
Apr. 21, 2015

Filed:

Apr. 14, 2011

Methods for patterning microelectronic devices using two sacrificial layers

Applicants:

Nam-gun Kim, Seoul, KR;

Yoonjae Kim, Yongin-si, KR;

Sungil Cho, Seoul, KR;

Inventors:

Nam-Gun Kim, Seoul, KR;

Yoonjae Kim, Yongin-si, KR;

Sungil Cho, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, P.A

Primary Examiner:

Charles Garber

Assistant Examiner:

Abdulfattah Mustapha

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 27/22 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 27/102 (2006.01); H01L 27/115 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 27/1021 (2013.01); H01L 27/10817 (2013.01); H01L 27/10855 (2013.01); H01L 27/10882 (2013.01); H01L 27/10894 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 27/224 (2013.01); H01L 27/24 (2013.01); H01L 28/91 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/10 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31144 (2013.01);
Abstract

A lower layer of a microelectronic device may be patterned by forming a first sacrificial layer on the lower layer; patterning a plurality of spaced apart trenches in the first sacrificial layer; forming a second sacrificial layer in the plurality of spaced apart trenches; patterning the second sacrificial layer in the plurality of spaced apart trenches to define upper openings in the plurality of spaced apart trenches; and patterning the lower layer using the first and second sacrificial layers as a mask to form lower openings in the lower layer.

Find Patent Forward Citations

Quick Actions:

Kim, Nam-Gun. (2015). Methods for patterning microelectronic devices using two sacrificial layers (U.S. Patent No. 9012326). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9012326

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