The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Sep. 09, 2011
Satoshi Hikida, Osaka, JP;
Satoshi Hikida, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In the method of manufacturing a semiconductor apparatus of the present invention, after forming trench isolation regions, andon a surface of a semiconductor substrateso as to isolate element regions on which the semiconductor elements are to be formed, a silicon nitride film (antioxidant film)is formed so as to cover the trench isolation regions and to stick out from the trench isolation regions with partially overlapping element regions adjacent to the trench isolation regions, and a thermal oxide filmthat is thicker than a thermal oxide film required in a semiconductor element of a predetermined size among a plurality of semiconductor elements, is formed on the element region using the antioxidant film as a mask.