The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Mar. 14, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung-Dae Suk, Seoul, KR;

Hee-Soo Kang, Seoul, KR;

Sung-Il Park, Suwon-si, KR;

Sang-Hoon Lee, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/823871 (2013.01);
Abstract

A semiconductor device includes a substrate having a first region and a second region, first and second gate electrodes disposed on the first and second regions, respectively, and first and second source/drain regions disposed on at least one side of the first and second gate electrodes, respectively. The device further includes first and second silicide regions in the first and second source/drain regions, respectively. A contact area between the first silicide region and the first source/drain region is differs in size from a contact area between the second silicide region and the second source/drain region. Methods of fabricating such devices are also provided.


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