Process for producing photovoltaic device

Abstract

A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device () comprising a heterojunction cell () prepared by sequentially stacking an i-type amorphous silicon semiconductor layer () and an n-type amorphous silicon semiconductor layer () on top of a substrate (p-type crystalline Ge ()), the process comprising a PHexposure treatment stage of adjusting the temperature of the substrate (), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer () on the PH-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer () on the i-type amorphous silicon semiconductor layer (), and an electrode formation stage of forming electrodes () on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate ().