The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Nov. 14, 2012
Applicant:

Saint-gobain Glass France, Courbevoie, FR;

Inventors:

Claire Thoumazet, Paris, FR;

Martin Melcher, Herzogenrath, DE;

Arnaud Huignard, Compigne, FR;

Raphael Lante, Herzogenrath, DE;

Assignee:

Saint-Gobain Glass France, Courbevoie, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 17/06 (2006.01); C23C 16/22 (2006.01); C03C 17/34 (2006.01); C23C 16/40 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
C03C 17/3441 (2013.01); C23C 16/401 (2013.01); C03C 2218/152 (2013.01); C03C 2218/153 (2013.01); C03C 2218/156 (2013.01); C23C 16/325 (2013.01); C23C 16/402 (2013.01);
Abstract

The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOC) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth Pto a depth P, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth Pto a depth P, where the C/Si atomic ratio is less than or equal to 0.4, with P<P<P<Pand (P−P)+(P−P)<E the distance between Pand Prepresenting from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between Pand Prepresenting from 10% to 70% of the total thickness E of the silicon oxycarbide layer.


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